Junior Group Research Leader (m/f/d)

Junior Group Research Leader (m/f/d)

• Vollzeit
• Hybrid
• Berlin, Deutschland
• Mit Berufserfahrung
• 21.09.26

The Leibniz-Institut für Kristallzüchtung (IKZ) is a leading research institution in the field of science & technology as well as service & transfer of crystalline materials. Our goal is to enable solutions for pressing societal challenges (e.g. communication, artificial intelligence, climate protection, health, etc.) through modern electronic & photonic technologies. The work covers the entire spectrum from basic and applied research to pre-industrial development and is carried out in cooperation with national and international partners from universities, academies and industry. The institute is part of the Forschungsverbund Berlin and a member of the Leibniz Association. You can find more details on the institute webpage:

We are seeking a

Junior Group Research Leader (m/f/d) “SiGe based bulk crystals for quantum technologies”

The Semiconductor Section is internationally well recognized for its expertise in the growth of bulk semiconductor crystals, employing a broad range of melt-growth techniques. Our research spans both fundamental and application-oriented studies of classical semiconductor materials, including silicon, germanium, SiGe alloys, and III–V compounds. Czochralski (Cz) growth of bulk crystals is a unique expertise of our institute and is one of the main research activities of the semiconductor section. High-quality Si, Ge, and SiGe crystals with tailored material properties enable a wide range of applications in energy-efficient electronics, photonics, and quantum computing. We maintain close collaborations with leading semiconductor industries, facilitating the transfer of materials and technologies toward industrial applications. Supported by state-of-the-art laboratory infrastructure and a range of pre-industrial-scale Cz crystal pullers, our facilities enable the growth of Si and Ge crystals with diameters of up to 6 inches.

Building on this expertise, we aim to expand our bulk crystal growth capabilities toward the development of quantum-grade bulk substrates. To this end, we are establishing a junior research group dedicated to developing a group-IV mixed-crystal platform for advanced semiconductor substrates. The junior research group will focus on SiGe and GeSn as promising substrate materials for CMOS-compatible quantum technologies, with particular emphasis on the development of larger-diameter, ultra-pure mixed crystals. Key research objectives will include crystal diameter scale-up, defect reduction, compositional homogeneity, and precise control of electrical properties to meet the stringent material requirements of quantum devices. By integrating advanced bulk crystal growth with device-driven material specifications, the group will establish scalable, high-quality substrate platforms tailored to the requirements of next-generation, CMOS-compatible quantum technologies.